Breakdown behavior of SiC photoconductive switch with transparent electrode
نویسندگان
چکیده
The breakdown behavior of a V-doped 4H silicon carbide photoconductive switch with transparent electrode under high electric field is studied. device triggered by laser pulse below the bandgap wavelength repetition rate 100 Hz. light peak-power reaches hundreds kW, and bias voltage increased from 10 to 20 kV. With accumulation number pulses, shows behavior. Through microscopic diagnosis damaged devices, according analysis theoretical simulation results, due interaction between aluminum doped zinc oxide on surface, resulting in melting electrode. direct illuminate can form enhancement effect at junction substrate electrode, damage formation pre-breakdown. Finally, inevitably occurs.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2022
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0101435